期刊
ACS NANO
卷 3, 期 9, 页码 2674-2676出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn900744z
关键词
graphene; transistor; helium ion microscope; etching
类别
资金
- Al-19 exander von Humboldt foundation through a Feodor Lynen Research Fellowship
- NRI INDEX program
We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions In a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (02) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.
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