期刊
ACS NANO
卷 3, 期 6, 页码 1513-1517出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn9001566
关键词
quantum dots; patterned substrates; single photon emitters
类别
资金
- Spanish MEC
- CAM [TEC-2005-05781-CO3-01/03, TEC-200806756-CO3-01/03, 505/ESP/000200),]
- Consolider-Ingenio 2010 [CSD2006-0019]
We present a fabrication method to produce site-controlled and regularly spaced InAs/GaAs quantum dots for applications in quantum optical information devices. The high selectivity of our epitaxial regrowth procedure can be used to allocate the quantum dots only in positions predefined by ex-situ local oxidation atomic force nanolithography. The quantum dots obtained following this fabrication process present a high optical quality which we have evaluated by microphotoluminescence and photon correlation experiments.
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