期刊
ACS NANO
卷 3, 期 11, 页码 3431-3436出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn9008615
关键词
epitaxial graphene; silicon carbide; PTCDA; scanning tunneling microscopy; photoemission spectroscopy
类别
资金
- NRFCRP [R-143-000-360-281]
- ARF [R-143-000-392-133, R-144000-192-116]
In situ low-temperature scanning tunneling microscopy is used to study the growth of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) on epitaxial graphene (EG) on 6H-SiC(0001), as well as on HOPG for comparison. PTCDA adopts a layer-by-layer growth mode, with its molecular plane lying flat on both surfaces. The PTCDA films grow continuously over the EG step edges, but not on HOPG. STS performed on single-layer PTCDA on monolayer EG shows a wide band gap larger than 3.3 eV, consistent with pristine PTCDA films. Synchrotron-based high-resolution photoemission spectroscopy reveals weak charge transfer between PTCDA and EG. This suggests weak electronic coupling between PTCDA and the underlying EG layer.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据