期刊
ACS NANO
卷 3, 期 11, 页码 3781-3787出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn901079p
关键词
carbon nanotube; CMOS; inverter mobility; scaling
类别
资金
- Ministry of Science and Technology [2006CB932401, 2006CB932402]
- National Science Foundation of China [90606026]
Symmetric n- and p-type field-effect transistors (FETs) have been fabricated on the same undoped single-walled carbon nanotube (SWCNT). The polarity of the FET is defined by controlled injection of electrons (n-type, via Sc electrodes) or holes (p-type, via Pd electrodes) into the SWCNT, instead of via chemically doping the SWCNT, The SWCNT-based FETs with different channel lengths show a clear trend of performance improvement for channel length scaling. Taking full advantage of the perfect symmetric band structure of the semiconductor SWCNT, a perfect SWCNT-based CMOS inverter is demonstrated, which gives a voltage gain of over 160, and for the two adjacent n- and p-type FETs fabricated on the same SWCNT, high field mobility is realized simultaneously for electrons (3000 cm(2)/V.s) and holes (3300 cm(2)/V.s).
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