Lithographically patterned nanowire electrodeposition: A method for patterning electrically continuous metal nanowires on dielectrics

Lithographically patterned nanowire electrodeposition (LPNE) is anew method for fabricating polycrystalline metal nanowires using electrodeposition. In LPNE, a sacrificial metal (M-1 = silver or nickel) layer, 5-100 nm in thickness, is first vapor deposited onto a glass, oxidized silicon, or Kapton polymer film. A (+) photoresist (PR) layer is then deposited, photopatterned, and the exposed Ag or Ni is removed by wet etching. The etching duration is adjusted to produce an undercut approximate to 300 nm in width at the edges of the exposed PR. This undercut produces a horizontal trench with a precisely defined height equal to the thickness of the M-1 layer. Within this trench, a nanowire of metal M-2 is electrodeposited (M-2 = gold, platinum, palladium, or bismuth). Finally the PR layer and M, layer are removed. The nanowire height and width (an be independently controlled down to minimum dimensions of 5 nm (h) and 11 nm (w), for example, in the case of platinum. These nanowires can be 1 cm in total length. We measure the temperature-dependent resistance of 100 mu m sections of Au and Pd wires in order to estimate an electrical grain size for comparison with measurements by X-ray diffraction and transmission electron microscopy. Nanowire arrays can be postpatterned to produce two-dimensional arrays of nanorods. Nanowire patterns (an also be overlaid one on top of another by repeating the LPNE process twice in succession to produce, for example, arrays of low-impedance, nanowire-nanowire junctions.