4.8 Article

All-Oxide-Based Highly Transparent Photonic Synapse for Neuromorphic Computing

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 40, 页码 34370-34376

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b10870

关键词

photonic synapse; transparent; all-oxide; charge trapping/detrapping; photoresponse

资金

  1. Basic Science Research Program through the National Research Foundation (NRF) of Korea by the Ministry of Education [NRF-2018R1D1A1B07049871, NRF-2018R1D1A1B07045336]
  2. HDC-ICONTROLS
  3. National Research Foundation of Korea [2018R1D1A1B07049871] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

The neuromorphic system processes enormous information even with very low energy consumption, which practically can be achieved with photonic artificial synapse. Herein, a photonic artificial synapse is demonstrated based on an all-oxide highly transparent device. The device consists of conformally grown In2O3/ZnO thin films on a fluorine-doped tin oxide/glass substrate. The device showed a loop opening in current-voltage characteristics, which was attributed to charge trapping/detrapping. Ultraviolet illumination induced versatile features such as short-term/long-term plasticity and paired pulse facilitation were truly confirmed. Further, photonic potentiation and electrical habituation were implemented. This study paves the way to develop a device in which current can be modulated under the action of optical stimuli, serving as a fundamental step toward the realization of low-cost synaptic behavior.

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