期刊
ACS APPLIED MATERIALS & INTERFACES
卷 6, 期 18, 页码 15881-15888出版社
AMER CHEMICAL SOC
DOI: 10.1021/am503464h
关键词
MoS2; pulsed laser deposition; thin film; field emission; photodiode heterostructures
资金
- Department of Science and Technology (Government of India) [SR/S2/RJN-130/2012]
- NCL-MLP project [028626]
- DST-SERB Fast-track Young Scientist Project [SB/FT/CS-116/2013]
- INUP IITB project - DeitY, MCIT, Government of India
- DST-AISRF
- University Grants Commission
- Council of Scientific and Industrial Research
We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 mu A/cm(2) is found to be 2.8 V/mu m. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of similar to 30 mA/cm(2) at a relatively lower applied voltage of similar to 3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLDMoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.
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