期刊
ACS APPLIED MATERIALS & INTERFACES
卷 6, 期 16, 页码 14159-14166出版社
AMER CHEMICAL SOC
DOI: 10.1021/am5034878
关键词
GaN; nanowire arrays; epitaxial growth; interface; yellow-band emission
资金
- National Nature Science Foundation of China
- Liaoning Province [51102034, 201204486]
- Institute of Metal Research (IMR), Chinese Academy of Science (CAS) [Y2NCA111A1]
Here, we report the origin of the yellow-band emission in epitaxial GaN nanowire arrays grown under carbon-free conditions. GaN nanowires directly grown on [0001]-oriented sapphire substrate exhibit an obvious and broad yellow-band in the visible range 400-800 nm, whereas the insertion of Al/Au layers in GaN-sapphire interface significantly depresses the visible emission, and only a sharp peak in the UV range (369 nm) can be observed. The persuasive differences in cathodoluminescence provide direct evidence for demonstrating that the origin of the yellow-band emission in GaN nanowire arrays arises from dislocation threading. The idea using buffering/ barrier layers to isolate the dislocation threading in epitaxially grown GaN nanowires can be extended to the rational synthesis and structural defect controlling of a wide range of semiconductor films and nanostructures with superior crystal quality and excellent luminescence property.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据