Bipolar Resistance Switching in Transparent ITO/LaAlO3/SrTiO3 Memristors

We report reversible bipolar resistance switching behaviors in transparent indium-tin oxide (ITO)/LaAlO3/SrTiO3 memristors at room temperature. The memristors exhibit high optical transparency, long retention, and excellent antifatigue characteristics. The high performances are promising for employing ITO/LaAlO3/SrTiO3 memristors in nonvolatile transparent memory and logic devices. The nonvolatile resistance switching behaviors could be attributed to the migration of positively charged oxygen vacancies from the SrTiO3 substrate to the LaAlO3 film, resulting in Poole-Frenkel emission for the low resistance state and thermionic emission for the high resistance state.