期刊
ACS APPLIED MATERIALS & INTERFACES
卷 6, 期 4, 页码 2486-2492出版社
AMER CHEMICAL SOC
DOI: 10.1021/am4049139
关键词
high-k dielectrics; conductive AFM (CAFM); metal-insulator-metal (MIM) capacitor; TiO2; RuO2
资金
- German Federal Ministry of Education and Research (BMBF) [01M3089E]
- Slovak grant agency [VEGA 2/0147/11, APVV-0509-10]
- Estonian Ministry of Education and Research [IUT2-24]
- Estonian Centre of Excellence in Research [TK117]
- Converging Research Center Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science, and Technology of the Korean government [2012K001299]
Topography and leakage current maps of TiO2 films grown by atomic layer deposition on RuO2 electrodes using either a TiCl4 or a Ti(O-i-C3H7)(4) precursor were characterized at nanoscale by conductive atomic force microscopy (CAFM). For both films, the leakage current flows mainly through elevated grains and not along grain boundaries. The overall CAFM leakage current is larger and more localized for the TiCl4-based films (0.63 nm capacitance equivalent oxide thickness, CET) compared to the Ti(O-i-C3H7)(4)-based films (0.68 nm CET). Both films have a physical thickness of similar to 20 nm. The nanoscale leakage currents are consistent with macroscopic leakage currents from capacitor structures and are correlated with grain characteristics observed by topography maps and transmission electron microscopy as well as with X-ray diffraction.
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