期刊
ACS APPLIED MATERIALS & INTERFACES
卷 6, 期 9, 页码 6170-6176出版社
AMER CHEMICAL SOC
DOI: 10.1021/am500731n
关键词
ZnO nanowire; ZnO/ZnS core/shell; type II band structure; passivation
资金
- National Research Foundation of Korea (NRF) - Korea government (MSIP) (CELA-NCRC) [2008-0062606]
- National Research Foundation of Korea (NRF) - Korea government [2013R1A1A1007978]
- National Research Foundation of Korea [2013R1A1A1007978] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report the electrical and optical properties of ZnO/ZnS core/shell nanowire (NW) devices. The spatial separation of charge carriers due to their type II band structure together with passivation effect on ZnO/ZnS core/shell NWs not only enhanced their charge carrier transport characteristics by confining the electrons and reducing surface states in the ZnO channel but also increased the photocurrent under ultraviolet (UV) illumination by reducing the recombination probability of the photogenerated charge carriers. Here the efficacy of the type-II band structure and the passivation effect are demonstrated by showing the enhanced subthreshold swing (150 mV/decade) and mobility (17.2 cm(2)/(V s)) of the electrical properties, as well as the high responsivity (4.4 X 10(6) A/W) in the optical properties of the ZnO/ZnS core/shell NWs, compared with the subthreshold swing (464 mV/decade), mobility (8.9 cm(2)/(V s)) and responsivity (2.5 X 10(6) A/W) of ZnO NWs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据