Simple Way to Engineer Metal-Semiconductor Interface for Enhanced Performance of Perovskite Organic Lead Iodide Solar Cells

A thin wide band gap organic semiconductor N,N,N',N'-tetraphenyl-benzidine layer has been introduced by spin-coating to engineer the metal-semiconductor interface in the hole-conductor-free perovsldte solar cells. The average cell power conversion efficiency (PCE) has been enhanced from 5.26% to 6.26% after the modification and a highest PCE of 6.71% has been achieved. By the aid of electrochemical impedance spectroscopy and dark current analysis, it is revealed that this modification can increase interfacial resistance of CH3NH3PbI3/Au interface and retard electron recombination process in the metal-semiconductor interface.