期刊
ACS APPLIED MATERIALS & INTERFACES
卷 6, 期 8, 页码 5413-5421出版社
AMER CHEMICAL SOC
DOI: 10.1021/am500815n
关键词
gelatin; resistive switching; memory; chelate effect; filamentary theory
资金
- National Science Council of Taiwan [NSC99-2627-E-006-003, NSC98-2221-E-006-213-MY3, NSC NSC101-2221-E-006-141-MY3, NSC102-222-E-006-182-MY3]
This paper presents the characteristics of gelatin, which can cause reproducible resistive switching and bipolar resistive switching in aluminum (Al)/gelatin (35 nm)/ITO devices. The memory devices exhibited a high ON/OFF ratio of over 10(6) and a long retention time of over 10(5) seconds. The resistive switching mechanism was investigated using the high-angle dark field transmission electron microscopy image of Al/gelatin/ITO devices in the pristine high-resistance state (HRS) and then in returning to HRS after the RESET process. The energy-dispersive X-ray spectroscopy analysis revealed the aggregation of N and Al elements and the simultaneous presence of carbon and oxygen elements in the rupture of filament paths. Furthermore, via a current-sensing atomic force microscopy, we found that conduction paths in the ON-state are distributed in a highly localized area, which is associated with a carbon-rich filamentary switching mechanism. These results support that the chelation of N binding with Al ions improves the conductivity of the low-resistance state but not the production of metal filaments.
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