期刊
ACS APPLIED MATERIALS & INTERFACES
卷 6, 期 17, 页码 15098-15104出版社
AMER CHEMICAL SOC
DOI: 10.1021/am5031837
关键词
hydrogen plasma; surface passivation; microstructure; solar cells; minority carrier lifetime
资金
- National Basic Research Program of China [2011CBA00706, 2011CBA00707]
- Science and Technology Support Program of Tianjin [12ZCZDGX03600]
- Major Science and Technology Support Project of Tianjin City [11TXSYGX22100]
- Specialized Research Fund for the PhD Program of Higher Education [20120031110039]
We have investigated the role of hydrogen plasma pretreatment in promoting silicon surface passivation, in particular examining its effects on modifying the microstructure of the subsequently deposited thin hydrogenated amorphous silicon (a-Si:H) passivation film. We demonstrate that pretreating the silicon surface with hydrogen plasma for 40 s improves the homogeneity and compactness of the a-Si:H film by enhancing precursor diffusion and thus increasing the minority carrier lifetime (teff). However, excessive pretreatment also increases the density of dangling bond defects on the surface due to etching effects of the hydrogen plasma. By varying the duration of hydrogen plasma pretreatment in fabricating silicon heterojunction solar cells based on textured substrates, we also demonstrate that, although the performance of the solar cells shows a similar tendency to that of the teff on polished wafers, the optimal duration is prolonged owing to the differences in the surface morphology of the substrates. These results suggest that the hydrogen plasma condition must be carefully regulated to achieve the optimal level of surface atomic hydrogen coverage and avoid the generation of defects on the silicon wafer.
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