期刊
ACS APPLIED MATERIALS & INTERFACES
卷 6, 期 9, 页码 6399-6405出版社
AMER CHEMICAL SOC
DOI: 10.1021/am405818x
关键词
oxide semiconductor; thin film-transistors; In-Ga-Zn-O; UV annealing; oxygen vacancy; metal-oxide bonds
资金
- National Research Foundation of Korea (NRF) - Korean Ministry of Education, Science and Technology (MEST) [2011-0028819]
We developed a method to improve the electrical performance and stability of passivated amorphous In-Ga-Zn-O thin-film transistors by simultaneous ultraviolet and thermal (SUT) treatment. SUT treatment was carried out on fully fabricated thin-film transistors, including deposited source/drain and passivation layers. Ultraviolet (UV) irradiation disassociated weak and diatomic chemical bonds and generated defects, and simultaneous thermal annealing rearranged the defects. The SUT treatment promoted densification and condensation of the channel layer by decreasing the concentration of oxygen-vacancy-related defects and increasing the concentration of metal-oxide bonds. The SUT-treated devices exhibited improved electrical properties compared to nontreated devices: field-effect mobility increased from 5.46 to 13.36 V.s, sub-threshold swing decreased from 0.49 to 0.32 V/decade, and threshold voltage shift (for positive bias temperature stress) was reduced from 5.1 to 1.9 V.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据