期刊
ACS APPLIED MATERIALS & INTERFACES
卷 6, 期 23, 页码 21363-21368出版社
AMER CHEMICAL SOC
DOI: 10.1021/am5063212
关键词
oxide semiconductor; thin-film transistors; bias stability; In-Ga-Zn-O; oxygen vacancy
资金
- Samsung Display
- National Research Foundation of Korea (NRF) grant - Korea government (MSIP) [2011-0028819]
- National Research Foundation of Korea [2011-0028819] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We proposed a simple method to deposit a vertically graded oxygen-vacancy active layer (VGA) to enhance the positive bias stress (PBS) stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). We deposited a-IGZO films by sputtering (target composition; In2O3:Ga2O3:ZnO = 1:1:1 mol %), and the oxygen partial pressure was varied during deposition so that the front channel of the TFTs was fabricated with low oxygen partial pressure and the back channel with high oxygen partial pressure. Using this method, we were able to control the oxygen vacancy concentration of the active layer so that it varied with depth. As a result, the turn-on voltage shift following a 10 000 s PBS of optimized VGA TFT was drastically improved from 12.0 to 5.6 V compared with a conventional a-IGZO TFT, without a significant decrease in the field effect mobility. These results came from the self-passivation effect and decrease in oxygen-vacancy-related trap sites of the VGA TFTs.
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