期刊
ACS APPLIED MATERIALS & INTERFACES
卷 7, 期 1, 页码 273-278出版社
AMER CHEMICAL SOC
DOI: 10.1021/am506162z
关键词
N-polar; InGaN MQWs; MOCVD; photoluminescence; mounds
资金
- Epistar Corp.
We have demonstrated nitrogen-polar (000 (1) over bar) (N-polar) InGaN multiple quantum wells (MQWs) with significantly improved luminescence properties prepared by pulsed metalorganic chemical vapor deposition. During the growth of InGaN quantum wells, Ga and N sources are alternately injected into the reactor to alter the surface stoichiometry. The influence of flow duration in pulsed growth mode on the luminescence properties has been studied. We find that use of pulsed-mode creates a high density of hexagonal mounds with an increased InGaN growth rate and enhanced In composition around screw-type dislocations, resulting in remarkably improved luminescence properties. The mechanism of enhanced luminescence caused by the hexagonal mounds is discussed. Luminescence properties of N-polar InGaN MQWs grown with short pulse durations have been significantly improved in comparison with a sample grown by a conventional continuous growth method.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据