期刊
ACS APPLIED MATERIALS & INTERFACES
卷 7, 期 1, 页码 232-240出版社
AMER CHEMICAL SOC
DOI: 10.1021/am5059316
关键词
silver nanowire; IGZO; oxide TFT; high mobility
资金
- Ministry of Science and Technology in Taiwan [101-2221-E-009-051-MY2, 100-2628-E-009-020-MY3]
- E-ink Holdings Inc.
In this work, we demonstrate sputtered amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm(2)/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without nanowires, the over 5-fold enhancement in the effective field-effect mobility exhibits clear dependence on the orientation as well as the surface coverage ratio of silver nanowires. Detailed material and device analyses reveal that during the room-temperature IGZO sputtering indium and oxygen diffuse into the nanowire matrix while the nanowire morphology and good contact between IGZO and nanowires are maintained. The unchanged morphology and good interfacial contact lead to high mobility and air-ambient-stable characteristics up to 3 months. Neither hysteresis nor degraded bias stress reliability is observed. The proposed AgNW-mediated a-IGZO TFTs are promising for development of large-scale, flexible, transparent electronics.
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