期刊
ACS APPLIED MATERIALS & INTERFACES
卷 6, 期 15, 页码 12815-12820出版社
AMER CHEMICAL SOC
DOI: 10.1021/am5028007
关键词
floating-gate memory; high-k polymer; organic thin-film transistor; solution-processable; flexible
资金
- Research Grants Council (RGC) of Hong Kong, China [PolyU5330/08E]
- National Natural Science Foundation of China [51203045]
High-performance low-voltage flash memories based on organic floating-gate field-effect transistors are prepared by a solution process for the first time. Transistors with a high-mobility n-type polymer semiconductor, poly{[N,N'-bis-(2-octyldodecyl)naphthalene-1,4,5,8-bis- (dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}, and a high-k polymer gate dielectric, poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (k approximate to 60), are successfully fabricated on flexible substrates. A thin layer of Au nanoparticles is embedded in the gate dielectric, which can store injected charge from the channel and result in a memory effect. The organic memories demonstrate high carrier mobilities (>0.3 cm(2)/(V s)), low program/erase voltages (+/- 6 V), little degradation after 10(5) program/erase cycles, and good retention after 105 s, which suggest great promise in the application of nonvolatile memories in flexible electronics.
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