期刊
ACS APPLIED MATERIALS & INTERFACES
卷 6, 期 16, 页码 14037-14042出版社
AMER CHEMICAL SOC
DOI: 10.1021/am503367f
关键词
LaAlO3/SrTiO3; carrier density; ambient effect; charge writing
资金
- Quantum Metamaterials Research Center through the National Research Foundation of Korea [NRF-2008-0062236]
- Basic Science Research Program through the National Research Foundation of Korea [NRF-2013R1A1A2063744]
- Korea Institute of Science and Technology (KIST) [2E24881]
We investigated the influences of charge writing on the surface work function (W) and sheet resistance (R) of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments: H2(2%)/N2(98%), air, N-2, and O-2. The decrease in W and R due to charge writing was much larger in air (Delta W = -0.45 eV and Delta R = -40 k Omega/S) than in O-2 (Delta W = -0.21 eV and Delta R = -19 k Omega/S). The reduced R could be maintained more than 100 h in H-2/N-2. Such distinct behaviors were quantitatively discussed, based on the proposed chargewriting mechanisms. Such analyses showed how several processes, such as carrier transfer via surface adsorbates, surface redox, electronic state modification, and electrochemical surface reactions, contributed to charge writing in each gas.
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