期刊
ACS APPLIED MATERIALS & INTERFACES
卷 5, 期 10, 页码 3995-3999出版社
AMER CHEMICAL SOC
DOI: 10.1021/am400068h
关键词
vertically aligned nanocomposites (VAN); epitaxy; thin films; low-field magnetoresistance (LFMR); pulsed-laser deposition; spintronics
资金
- U.S. National Science Foundation (Ceramic Program) [NSF-1007969]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1007969] Funding Source: National Science Foundation
Epitaxial (La0.7Sr0.3MnO3)(1-x):(ZnO)(x) (LSMO:ZnO) in vertically aligned nanocomposite (VAN) form was integrated on STO/TiN-buffered silicon substrates by pulsed-laser deposition. Their magnetotransport properties have been investigated and are systematically tuned through controlling the ZnO concentration. The composite film with 70% ZnO molar ratio exhibits a maximum magnetoresistance (MR) value of 55% at 70 K and 1 T. The enhanced tunable low-field MR properties are attributed to structural and magnetic disorders and spin-polarized tunneling through the secondary ZnO phase. The integration of LSMO:ZnO VAN films on silicon substrates is a critical step enabling the application of VAN films in future spintronic devices.
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