期刊
ACS APPLIED MATERIALS & INTERFACES
卷 5, 期 11, 页码 5276-5281出版社
AMER CHEMICAL SOC
DOI: 10.1021/am401119j
关键词
graphene; molecular doping; electrical properties; Raman spectroscopy; transparent conducting electrode
资金
- Nano-Material Technology Development Program [2012M3A7B4049888]
- Priority Research Centers Program through the National Research Foundation of Korea (NRF) [2012-0005859]
- Ministry of Education, Science and Technology
- Converging Research Center Program through the Ministry of Education, Science and Technology [2012K001310]
It is an essential issue in graphene-based nanoelectronic and optoelectronic devices to tune the electrical properties of graphene layers, while preserving its unique band structure. Here, we report the tuning of electronic properties of single-, bi-, and trilayer mechanically exfoliated graphenes by p-toluenesulfonic acid (PTSA) molecular doping. Raman spectroscopy and charge transport measurements revealed that PTSA molecule imposes n-doping to single-, bi-, and trilayer graphenes. The shift of G and 2D peak frequencies and intensity ratio of single-, bi-, and trilayer graphenes are analyzed as a function of reaction time. The Dirac point is also analyzed as a function of reaction time indicates the n-type doping effect for all single-, bi-, and trilayer graphenes. Our study demonstrates that chemical modification is a simple approach to tailor the electrical properties of single-, bi-, and trilayer graphenes, while maintaining the important electrical assets.
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