期刊
ACS APPLIED MATERIALS & INTERFACES
卷 5, 期 11, 页码 4739-4744出版社
AMER CHEMICAL SOC
DOI: 10.1021/am303261c
关键词
MoS2; oxygen plasma treatment; atomic layer deposition; Al2O3; HfO2
资金
- Basic Science Research program through the National Research Foundation of Korea [2012042548]
- World Class University program through the National Research Foundation of Korea [R32-2009-000-10124-0]
- Ministry of Education, Science and Technology
We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water oxidant. Due to the formation of an ultrathin Mo-oxide layer on the MoS2 surface, the surface coverage of Al2O3 and HfO2 films was significantly improved compared to those on pristine MoS2, even at a high ALD temperature. These results indicate that the surface modification of MoS2 by oxygen plasma treatment can have a major impact on the subsequent deposition of high-k thin films, with important implications on their integration in thin film transistors.
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