期刊
ACS APPLIED MATERIALS & INTERFACES
卷 5, 期 5, 页码 1793-1799出版社
AMER CHEMICAL SOC
DOI: 10.1021/am303128h
关键词
complementary resistive switching; AlN; bipolar resistive switching; filament; memristor; RRAM
资金
- National Basic Research Program of China [2010CB832905]
- National Natural Science foundation of China [51231004, 51202125]
We report the complementary resistive switching (CRS) behaviors in aluminum nitride (AlN)-based memory devices as the promising new material system for large-scale integration of passive crossbar arrays. By utilizing different electrodes (Cu, Pt, and TiN), CRS characteristics are demonstrated in both TiN/AlN/Cu/AlN/TiN electrochemical metallization cells and Pt/AlN/TiN/AlN/Pt ionic resistive switching systems. The instability of Pt/AlN/Cu/AlN/Pt based CRS is explained by the relatively small reset voltage caused by the thermal effects enhanced reset process in the corresponding bipolar resistive switching element. It is concluded that the prerequisite for reliable and stable CRS is that the reset voltage of the bipolar resistive switching element must be much larger than half of the set voltage.
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