期刊
ACS APPLIED MATERIALS & INTERFACES
卷 5, 期 18, 页码 9134-9140出版社
AMER CHEMICAL SOC
DOI: 10.1021/am4025142
关键词
photovoltaics; nanocrystals; selenization; CIGS; copper indium gallium selenide; sodium
资金
- Robert A. Welch Foundation [F-1464]
- National Science Foundation Industry/University Cooperative Research Center on Next Generation Photovoltaics [IIP-1134849]
- Ministry of Education, Culture, Sports, Science and Technology(MEXT), Japan
- National Science Foundation [DGE-1110007]
- Department of Defense (DoD) through the National Defense Science & Engineering Graduate Fellowship (NDSEG) Program
- Division Of Computer and Network Systems
- Direct For Computer & Info Scie & Enginr [1134849] Funding Source: National Science Foundation
The power conversion efficiency of photovoltaic devices made with ink-deposited Cu(INxGa1-x)Se-2 (CIGS) nanocrystal layers can be enhanced by sintering the nanocrystals with a high temperature selenization process. This process, however, can be challenging to control. Here, we report that ink deposition followed by annealing under inert gas and then selenization can provide better control over CIGS nanocrystal sintering and yield generally improved device efficiency. Annealing under argon at 525 degrees C removes organic ligands and diffuses sodium from the underlying soda lime glass into the Mo back contact to improve the rate and quality of nanocrystal sintering during selenization at 500 degrees C. Shorter selenization time alleviates excessive MoSe2 formation at the Mo back contact that leads to film delamination, which in turn enables multiple cycles of nanocrystal deposition and selenization to create thicker, more uniform absorber films. Devices with power conversion efficiency greater than 7% are fabricated using the multiple step nanocrystal deposition and sintering process.
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