期刊
ACS APPLIED MATERIALS & INTERFACES
卷 4, 期 3, 页码 1553-1559出版社
AMER CHEMICAL SOC
DOI: 10.1021/am201758z
关键词
silicon nanowire; etching; synthesis; nonlinear optics
资金
- National Natural Science Foundation of China [61006049, 50925207]
- Ministry of Science and Technology of China [2009DFA50620]
- Ministry of Education of China [IRT1064]
- Six Categories of Summit Talents of Jiangsu Province
- Jiangsu University [09JDG043]
- Common-wealth of Australia under Joint Research Centre for Functional Molecular Materials
A facile method for the low-cost and large-scale production of silicon nanowires has been developed. Silicon powders were subjected to sequential metal plating and metal-assisted chemical etching, resulting in well-defined silicon nanowires. The morphology and structure of the silicon nanowires were investigated, revealing that single-crystal silicon nanowires with average diameters of 79 +/- 35 nm and length more than 10 mu m can be fabricated. The silicon nanowires show excellent third-order nonlinear optical properties, with a third-order susceptibility much larger than that of bulk silicon, porous silicon, and silicon nanocrystals embedded in SiO2.
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