期刊
ACS APPLIED MATERIALS & INTERFACES
卷 4, 期 10, 页码 5416-5421出版社
AMER CHEMICAL SOC
DOI: 10.1021/am301342x
关键词
metal oxide thin-film transistors; hafnium-indium-zinc-oxide; indium-zinc-oxide; photostability; density-of-states
资金
- National Research Foundation (NRF)
- Korean government (MEST) [2011-0000313]
A novel method to design metal oxide thin-film transistor (TFT) devices with high performance and high photostability for next-generation flat-panel displays is reported. Here, we developed bilayer metal oxide TFTs, where the front channel consists of indium-zinc-oxide (IZO) and the back channel material on top of it is hafnium-indium-zinc-oxide (HIZO). Density-of-states (DOS)-based modeling and device simulation were performed in order to determine the optimum thickness ratio within the IZO/HIZO stack that results in the best balance between device performance and stability. As a result, respective values of 5 and 40 nm for the IZO and HIZO layers were determined. The TFT devices that were fabricated accordingly exhibited mobility values up to 48 cm(2)/(V s), which is much elevated compared to pure HIZO TFTs (similar to 13 cm(2)/(V s)) but comparable to pure IZO TFTs (similar to 59 cm(2)/(V s)). Also, the stability of the bilayer device (-1.18 V) was significantly enhanced compared to the pure IZO device (-9.08 V). Our methodology based on the subgap DOS model and simulation provides an effective way to enhance the device stability while retaining a relatively high mobility, which makes the corresponding devices suitable for ultradefinition, large-area, and high-frame-rate display applications.
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