期刊
ACS APPLIED MATERIALS & INTERFACES
卷 4, 期 11, 页码 5727-5731出版社
AMER CHEMICAL SOC
DOI: 10.1021/am301362f
关键词
resistance-switching random access memory; conductive nanowires; passivation; nanocomposites
资金
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education, Science and Technology, Korea [2011-0032156]
- Seed Collaborative RD Program
- Korean Research Council of Fundamental Science and Technology
- KIST
A nanocomposite capable of showing a resistance-switching behavior is prepared using novel resistance-switchable fillers embedded in a polymer matrix. The filler in this study employs a conformal passivation layer of highly crystalline TiO2 on surfaces of conductive Ag nanowires to effectively gate electron flows delivered through the conductive core, resulting in an excellent resistance-switching performance. A nanocomposite prepared by controlled mixing of the resistance-switchable nanowires with a polymer matrix successfully exhibited a resistance-switching behavior of highly enhanced reliability and a resistance on/off ratio, along with flexibility due to the presence of nanowires of a tiny amount. The advantages of our approach include a simple and low-cost fabrication procedure along with sustainable performances suitable for a resistance-switching random-access-memory application.
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