期刊
ACS APPLIED MATERIALS & INTERFACES
卷 3, 期 11, 页码 4254-4261出版社
AMER CHEMICAL SOC
DOI: 10.1021/am2009103
关键词
sodium beta-alumina; dielectric; low voltage; transparent electronic; oxide semiconductor; transistor
资金
- NSF Division of Materials Research [1005398, 0905176]
- AFOSR [FA9550-09-1-0259]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0905176] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1005398] Funding Source: National Science Foundation
Sodium beta-alumina (SBA)-based gate dielectric films have been developed for all solution-processed, transparent and low voltage field-effect transistors (FETs). Its high dielectric constant has been ascribed to sodium (Na+) ions in the crystal structure; however, there are no published experimental results concerning the contribution of Na+ ions to the dielectric behavior, and the degree of crystallinity of the thin films. In addition, as an ionic conductor, beta-alumina could give rise to some issues such as leakage current caused by Na diffusion, threshold voltage shift due to interface charge accumulation and longer response time due to slower polarization of the Na+ ions. This paper will address these issues using zinc tin oxide (ZTO) FETs, and propose possible measures to further improve SBA-based gate materials for electronic devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据