期刊
ACS APPLIED MATERIALS & INTERFACES
卷 3, 期 4, 页码 1055-1062出版社
AMER CHEMICAL SOC
DOI: 10.1021/am101195m
关键词
aluminum; P3HT; solar cell; GISAXS; sputtering
资金
- Deutsche Forschungsgemeinschaft [MU1487/5, SPP 1181]
- BMBF [05KS7W01]
Growth and morphology of an aluminum (Al) contact on a poly(3-hexylthiophene) (P3HT) thin film are investigated with X-ray methods and related to the interactions at the Al:P3HT interface. Grazing incidence small-angle scattering (GISAXS) is applied in situ during Al sputter deposition to monitor the growth of the layer. A growth mode is found, in which the polymer surface is wetted and rapidly covered with a continuous layer. This growth type results in a homogeneous film without voids and is explained by the strong chemical interaction between Al and P3HT, which suppresses the formation of three-dimensional duster structures. A corresponding three stage growth derived. X-ray reflectivity shows the penetration of Al atoms into the intermixing layer at the Al:P3HT interface. model (surface bonding, agglomeration, and layer growth) is P3HT film during deposition and the presence of a 2 nm thick intermixing layer at the Al:P3HT interface.
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