4.8 Article

Novel Semiconducting Quinone for Air-Stable n-Type Organic Field-Effect Transistors

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 2, 期 5, 页码 1303-1307

出版社

AMER CHEMICAL SOC
DOI: 10.1021/am1001794

关键词

field-effect transistors; organic semiconductors; organic electronics; n-type air-stable materials; quinones

资金

  1. Ministry of Education, Culture, by Sports, Science and Technology, Japan [19350092]
  2. Global COE
  3. Research Center for Emergence of New Molecular Chemistry
  4. Japan Society for the Promotion of Science
  5. Grants-in-Aid for Scientific Research [19350092] Funding Source: KAKEN

向作者/读者索取更多资源

Quinones are promising moieties for n-type organic semiconductors due to their high electron affinity. Benzo[1,2-b:4,5-b']-dithiophene-4,8-dione derivative with a quinone moiety have been synthesized, characterized, and used as active layer of organic field-effect transistors (OFETs). This derivative has deep LUMO level, leading to efficient charge-carrier injection and air stability. In addition, it forms a columnar structure with efficient intermolecular pi-pi and horizontal direction interactions, leading to high electron mobilities. In fact, OFET devices fabricated here showed good n-type characteristics, where the electron mobility was 0.15 cm(2) V-1 s(-1) under vacuum conditions and above 0.1 cm(2) V-1 s(-1) in air.

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