期刊
ACS APPLIED MATERIALS & INTERFACES
卷 1, 期 1, 页码 60-71出版社
AMER CHEMICAL SOC
DOI: 10.1021/am800001e
关键词
azobenzene; charge trapping; electron acceptor; electron donor; conductance switching; polymer memory
Electronic memory devices having the indium-tin oxide/polymer/Al sandwich structure were fabricated from polymers containing pendant azobenzene chromophores in donor-acceptor structures. The reversibility, or rewritability, of the high-conductivity (ON) state was found to be dependant on the terminal moiety of the azobenzene chromophore. While the polymers with electron-accepting terminal moieties (-Br or -NO2) in the pendant azobenzene exhibit write-once, read-many-times (WORM) type memory behavior, those with electron-donating terminal moieties (-OCH3) exihibit rewritable (FLASH) memory behavior. The WORM memory devices have low switching (write) voltages below -2 V and high ON/OFF current ratios of about 10(4)-10(6). The polarity of the write voltage can be reversed by using an electrode with a higher work function than Al, thus excluding metallic filamentary conduction as a cause of the bistable switching phenomenon. The FLASH memory devices have low write and erase voltages of about -1.7 to -1.8 V and 2.0 to 2.2 V, respectively, and ON/OFF current ratios of about 10(3)-10(4). The electrical bistability observed can be attributed to charge trapping at the azobenzene chromophores, resulting in the charge-separated, high-conductivity state. The proposed mechanism is supported experimentally by a red shift and peak broadening in the UV-visible absorption spectra of the polymer films resulting from the OFF-to-ON electrical transition.
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