4.4 Article

Class of high boost inverters based on switched-inductor structure

期刊

IET POWER ELECTRONICS
卷 8, 期 5, 页码 750-759

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INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/iet-pel.2014.0471

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  1. National Research Foundation of Korea [22A20130000110] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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This study deals with a class of the switched-inductor boost inverters (SLBIs) including the DC-linked type, continuous, discontinuous and ripple input current topologies. Compared with the conventional switched boost inverters, the SLBIs add only three diodes and one inductor to obtain a strong boost factor. In comparison with the conventional switched-inductor Z-source inverters (ZSIs) for the same voltage gain at the same modulation indexes, the proposed SLBIs use one more active switch and less passive components which results in reducing the size and cost. Moreover, the efficiency of the proposed inverters is improved in comparison with the conventional switched-inductor ZSIs. Analysis and operating principles are presented. A laboratory prototype was built with 24, 36, 48 V DC input and 127 Vrms output voltage to test high boost ability of the proposed inverters.

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