期刊
IET OPTOELECTRONICS
卷 9, 期 2, 页码 61-64出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/iet-opt.2014.0078
关键词
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资金
- UK EPSRC [EP/J012904/1]
- Royal Society
- Engineering and Physical Sciences Research Council [EP/J012904/1] Funding Source: researchfish
- EPSRC [EP/J012904/1] Funding Source: UKRI
The authors report 1.3-mu m InAs/GaAs quantum-dot (QD) lasers monolithically grown on a Si substrate by optimising the dislocation filter layers (DFLs). InAlAs/GaAs strained layer superlattices (SLSs) have been presented as DFLs in this study. A distinct improvement in the InAs/GaAs QDs was observed when using InAlAs/GaAs SLSs because of the effective filtering of threading dislocations. Consequently, a laser with a threshold current density of 194 A/cm(2) at room temperature and an operating temperature as high as 85 degrees C is successfully demonstrated. These results show the potential for integrating III-V QD materials on a Si platform via InAlAs/GaAs SLSs as DFL.
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