期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 29, 期 4, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.3610989
关键词
aluminium compounds; annealing; dielectric materials; electrodes; electron beam deposition; gallium arsenide; hafnium compounds; III-V semiconductors; indium compounds; interface states; metallisation
资金
- Semiconductor Research Corporation through the Nonclassical CMOS Research Center [1437.005, 1437.006]
- ONR Drift and Define MURI [N00014-08-1-0655, N00014-10-1-0937]
- NSF
The influence of different gate metal deposition processes on the electrical characteristics of dielectric/III-V interfaces is investigated. Al2O3 and HfO2 dielectrics are grown on In0.53Ga0.47As channels and top metal electrodes are deposited by either thermal evaporation or electron beam deposition. It is shown that metal-oxide-semiconductor capacitors with electron beam evaporated electrodes exhibit substantially larger midgap interface trap densities than those with thermally evaporated electrodes. The damage caused by electron beam metallization can be mitigated by subsequent, long anneals in forming gas. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3610989]
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