期刊
PHYSICAL REVIEW MATERIALS
卷 2, 期 6, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.2.060401
关键词
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资金
- French National Research Agency ANTIPODE Project [14-CE26-0014-01]
- French National Research Agency ORPHEUS Project [ANR-17-CE24-0019-01]
- Region Bretagne
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically resolved microscopy shows that monodomain three-dimensional islands are observed at the early stages of AlSb, AlN, and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free-energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including a description of the formation of antiphase boundaries.
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