4.3 Article

Multivalley two-dimensional electron system in an AlAs quantum well with mobility exceeding 2 x 106 cm2 V-1 s-1

期刊

PHYSICAL REVIEW MATERIALS
卷 2, 期 7, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.2.071001

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资金

  1. NSF [DMR 1709076, ECCS 1508925, MRSEC DMR 1420541]
  2. Gordon and Betty Moore Foundation [GBMF4420]
  3. Department of Energy Basic Energy Sciences [DEFG02-00-ER45841]

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Degenerate conduction-band minima, or valleys, in materials such as Si, AlAs, graphene, and MoS2 allow them to host two-dimensional electron systems (2DESs) that can access a valley degree of freedom. These multivalley 2DESs present exciting opportunities for both pragmatic and fundamental research alike because not only are they a platform for valleytronic devices, but they also provide a tool to tune and investigate the properties of complex many-body ground states. Here, we report ultra-high-quality, modulation-doped AlAs quantum wells containing 2DESs that occupy two anisotropic valleys and have electron mobilities peaking at 2.4 x 10(6) cm(2) V-1 s(-1) at a density of 2.2 x 10(11) cm(-2). This is more than an order of magnitude improvement in mobility over previous results. The unprecedented quality of our samples is demonstrated by magneto-transport data that show high-order fractional quantum Hall minima up to the Landau level filling nu = 8/17, and even the elusive nu = 1/5 quantum Hall state.

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