期刊
PHYSICAL REVIEW MATERIALS
卷 2, 期 6, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.2.060404
关键词
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资金
- Department of Energy
- Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
- Laboratory Directed Research and Development Program of Oak Ridge National Laboratory
- Center for Materials Processing, a Tennessee Higher Education Commission (THEC) supported Accomplished Center of Excellence
- Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4416]
- US DOE [DE-AC05-00OR22725]
- U.S. Government
Examples of single-crystal epitaxial thin films of a high entropy perovskite oxide are synthesized. Pulsed laser deposition is used to grow the configurationally disordered ABO(3) perovskite Ba(Zr-0.2 Sn0.2Ti0.2 Hf-0.2 Nb-0.2)O-3 epitaxially on SrTiO3 and MgO substrates. X-ray diffraction and scanning transmission electron microscopy demonstrate that the films are single phase with excellent crystallinity and atomically abrupt interfaces to the underlying substrates. Atomically resolved electron-energy-loss spectroscopy mapping shows a uniform and random distribution of all B-site cations. The ability to stabilize perovskites with this level of configurational disorder offers new possibilities for designing materials from a much broader combinatorial cation pallet while providing a fresh avenue for fundamental studies in strongly correlated quantum materials where local disorder can play a critical role in determining macroscopic properties.
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