Ordered structure of FeGe2 formed during solid-phase epitaxy

Fe3Si/Ge(Fe,Si)/Fe3Si thin-film stacks were grown by a combination of molecular beam epitaxy and solid-phase epitaxy (Ge on Fe3Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron x-ray diffraction. The Ge(Fe,Si) films crystallize in the well-oriented, layered tetragonal structure FeGe2 with space group P4mm. This kind of structure does not exist as a bulk material and is stabilized by the solid-phase epitaxy of Ge on Fe3Si. We interpret this as an ordering phenomenon induced by minimization of the elastic energy of the epitaxial film.