Influence of Sputtering Power of Te and Annealing on Sb-Te Thin Films Fabricated by RF and DC Co-Sputtering

Antimony and tellurium were deposited on K9 glass via direct current and radio frequency magnetron co-sputtering. Antimony telluride thermoelectric thin films were simultaneously synthesized without post treatment. The influence of the sputtering power of Te and annealing of Sb-Te fabricated by magnetron sputtering were investigated. The maximum Seebeck coefficient of Sb-Te film was 212 mu V/K which was obtained at the sputtering power of Sb 4W and Te 60W separately. When annealed at 300 C, the electrical resistivity and Seebeck coefficient of the film are 6.67x10(4) S/m and 119 mu V/K. The power factor increased to the highest value of 9.4x 10(-4) W/mK(2) from 4x10(-5) W/mK(2) after post treatment of the as-deposited film.