期刊
NANOSCALE HORIZONS
卷 3, 期 6, 页码 -出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8nh00123e
关键词
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资金
- NSFC [51422201]
- NSFC Program [61505026, 51732003, 61574031, 51372035, 61604037, 61774031, 51701037, 21501167]
- 111 Project [B13013]
- Jilin Province [20160101324JC, 20160520009JH, 20160520115JH, JJKH20180007KJ]
- Postdoctoral Science Foundation [2017M621189]
- Fundamental Research Funds for the Central Universities [2412017FZ010]
It is quite necessary to understand and control the essential carrier dynamic behaviors of two-dimensional WS2, which is regarded as a very promising material for integrated nanoelectronic and optoelectronic devices. Herein, a high-temperature driven carrier transfer process of multilayer WS2 nanoflakes is proposed. The established model, involving the inter-valley transfer process of photocarriers from the Lambda/Gamma point to the K point, predicts the significant emission enhancement of the K -> K direct transition at high temperatures, which is verified by both theoretical calculations and experimental observations. On the one hand, variations in the estimated population ratio of photo-carriers with increasing temperature well support the proposed model. On the other hand, temperature-dependent photoluminescence spectra clearly show that the K -> K direct emission intensity is remarkably enhanced by similar to 300-fold as the temperature is elevated to 760 K. Time-resolved fluorescence spectral studies confirm the occurrence of the inter-valley carrier transfer process in the multilayer WS2. These results provide solid evidence for the proposed inter-valley carrier transfer model. Such a mechanism could not only be applied to improve the luminescence intensity of indirect-band-gap semiconductors, but also be further extended to design optoelectronic devices which have special requirements on controlling the carrier dynamic behavior.
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