期刊
ACS ENERGY LETTERS
卷 3, 期 8, 页码 1882-1886出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.8b01182
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资金
- UK Engineering and Physical Sciences Research Council (EPSRC) [EP/L017792/1]
- Institute of Advanced Studies of the University of Bristol
- EPSRC Capital grant [EP/K035746/1]
- BBSRC/EPSRC [L01386X]
- EPSRC [EP/L017792/1] Funding Source: UKRI
Phase-pure BiI3 films obtained by versatile gas-phase iodination of Bi2S3 are investigated as an absorber in photovoltaic devices. This preparation method leads to highly crystalline BiI3 films featuring a rhombohedral phase and a high-degree of stacking order. The films are composed of micrometer-sized flat grains distributed homogeneously across the F-doped SnO2 (FTO) substrate, exhibiting an indirect band gap transition at 1.72 eV. High-level calculations based on G(0)W(0) approximation are used to rationalize the electronic structure of BiI3, confirming the band gap value estimated experimentally. The films show p-type conductivity with an acceptor density on the order of 10(15) cm(-3). Solar cells with the architecture glass/FTO/TiO2/BiI3/F8/Au, where F8 is poly(9,9-di-n-octylfluorenyl-2,7-diyl), display a record open-circuit voltage above 600 mV and overall power conversion efficiency of 1.2% under AM 1.5G illumination. The large open-circuit potential is rationalized in terms of carrier lifetimes longer than 1 ns as probed by time-resolved photoluminescence spectroscopy.
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