期刊
OPTOELECTRONICS LETTERS
卷 7, 期 6, 页码 431-436出版社
TIANJIN UNIV TECHNOLOGY
DOI: 10.1007/s11801-011-1066-z
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资金
- National Natural Science Foundation of China [50972105]
- National High Technology Research and Development Program of China [2009AA03Z444]
- Key Supporting Plan Program of Tianjin [10ZCKFGX01200]
Polycrystalline ZnO films are prepared using radio frequency magnetron sputtering on glass substrates which are sputteretched for different time. Both the size of ZnO grains and the root-mean-square (RMS) roughness decrease, as the sputteretching time of the substrate increases. More Zn atoms are bound to O atoms in the films, and the defect concentration is decreased with increasing sputter-etching time of substrate. Meanwhile, the crystallinity and c-axis orientation are improved at longer sputter-etching time of the substrate. The Raman peaks at 99 cm(-1), 438 cm(-1) and 589 cm(-1) are identified as E-2 (low), E-2 (high) and E-1 (LO) modes, respectively, and the position of E-1 (LO) peak blue shifts at longer sputter-etching time. The transmittances of the films, which are deposited on the substrate and etched for 10 min and 20 min, are higher in the visible region than that of the films deposited under longer sputter-etching time of 30 min. The bandgap increases from 3.23 eV to 3.27 eV with the increase of the sputter-etching time of substrate.
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