Fabrication of ultra-high-density nanodot array patterns (∼3 Tbits/in.2) using electron-beam lithography

The authors fabricated 15 nm pitch scale high-density dot patterns on a Si substrate using a hydrogen silsesquioxane electron-beam (e-beam) resist, vacuum treatment as a prebake, and vertical sidewall etching. The e-beam lithography was performed at 100 keV. The dot density fabricated was close to 3 Tbits/in.,(2) which is one of the highest density patterns reported thus far. The process window was quite wide and the result can be easily and routinely duplicated. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3646469]