期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 6, 期 1, 页码 830-834出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2018.2855731
关键词
Oxide semiconductor; InGaZnOx; asymmetrical local defect; barrier lowering; TCAD
资金
- DGIST Research and Development Program of the Ministry of Science, ICT, and Future Planning [18-01-HRMA-04]
- ICT Research and Development Program of MSIP/IITP [2017-0-00674]
- National Research Foundation of Korea (NRF) [NRF-2018R1D1A1B07041075]
- Ministry of Science & ICT (MSIT), Republic of Korea [18-01-HRMA-04] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2018R1D1A1B07041075] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Asymmetrical electrical properties induced by local acceptor-like defect states in oxide semiconductor thin-film transistors are investigated. In addition, we report on the origin of asymmetrical transport characteristics depending on the drain voltage level. In particular, we observe that these asymmetrical properties depend strongly on this level. Numerical calculations demonstrate that potential barrier lowering in the local area occurs at the drain electrode's edge.
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