期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 6, 期 1, 页码 664-673出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2018.2835818
关键词
Focal plane arrays; crosstalk; infrared detectors; non-monochromatic simulations
A closed-form probabilistic model for inter-pixel crosstalk in planar HgCdTe focal plane arrays is presented, providing simple expressions of crosstalk as function of device parameters like the pixel pitch, the absorber thickness, and the extension of the carrier depleted region. The method is effective in particular for performing parameter sensitivity studies on inter-pixel crosstalk, as an alternative to large-scale numerical simulations. The model is validated against three-dimensional combined optical and electrical numerical simulations, considering realistic, non-monochromatic illumination.
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