期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 6, 期 1, 页码 680-684出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2018.2837352
关键词
Amorphous indium-zinc-oxide (a-IZO); self-aligned; top-gate; aluminum reaction
资金
- National Science Foundation of China [61504003]
- Shenzhen Municipal Scientific Program [JSGG20150331101105708, JCYJ20160510144204207]
- Guangdong Scientific Program [2014B050505005, 2016A030313382]
A self-aligned fabrication process for top-gate amorphous indium-zinc-oxide (a-IZO) thinfilm transistors (TFTs) is demonstrated. Aluminum (Al) thermal treatment is employed to dope the a-IZO layer and thus form the self-aligned source/drain regions. The results show that the sheet resistance of the Al-treated a-IZO layer can be as low as 360 Omega/rectangle. The fabricated top-gate TFTs typically have a mobility of 16.84 cm(2)/V . s, subthreshold swing of 0.14 V/dec and on/off current ratio of > 10(9). The Al-treated TFTs show a significant scalability and stability enhancement compared to the conventional Ar plasma-treated ones. This enhancement can be attributed to the thin Al2O3 layer formed on source-drain area that blocks the diffusion of hydrogen or H2O from the passivation layer into the source-drain and channel regions.
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