期刊
RESULTS IN PHYSICS
卷 9, 期 -, 页码 1534-1536出版社
ELSEVIER
DOI: 10.1016/j.rinp.2018.05.012
关键词
-
资金
- Basic Science Research Program through the National Research Foundation of Korea - Ministry of Education [NRF-2016R1D1A1B03932295]
We report the transport behavior of bilayer graphene grown by thermal chemical vapor deposition. The bilayer graphene films annealed at 700 degrees C in a furnace under Ar atmosphere exhibited transitions from a metal to a semiconductor or insulator, with temperature-dependent resistances. This modulation of electrical properties could be explained by two possible mechanisms: variable range hopping (VRH) and thermally activated (TA) conduction. In particular, Anderson localization was suggested for the metal-insulator (MI) transition in the transport of bilayer graphene, shifting the transition point to room temperature by an increase in the disorder up to 7.5x10(13) cm(-2).
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