期刊
RESULTS IN PHYSICS
卷 9, 期 -, 页码 1170-1171出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.rinp.2018.04.042
关键词
Gallium oxide; Field plate; Breakdown voltage; High permittivity; Schottky barrier diode
资金
- Material Component Development Program of MOTIE/KEIT [10080736]
- Basic Science Research Programs through NRF [2015R1A6A1A03031833, 2016R1D1A1B03935445]
- National Research Foundation of Korea [2016R1D1A1B03935445] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3 SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.
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