期刊
TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS
卷 470, 期 -, 页码 60-65出版社
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/KEM.470.60
关键词
germanium; dielectric constant; density functional theory
资金
- Grants-in-Aid for Scientific Research [22013006] Funding Source: KAKEN
Dielectric properties of a-quartz and rutile-GeO2 thin-films are investigated using first-principles ground-state calculations in external electric fields. The optical and the static dielectric constants inside the films have nearly-constant values, corresponding to their bulk values, while only at the topmost surface layer the dielectric constants decrease distinctly. It has been found that the dielectric constant for the rutile-GeO2 is larger than that for the a-quartz one, which stems from the larger ionic character of the Ge-O bond for the rutile phase.
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